sct4062krhr-凯发k8一触即发
1200v, 26a, 4引脚thd, 沟槽结构 车载sic-mosfet
sct4062krhr
主要规格
特性：
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
62
generation
4th gen (trench)
drain current[a]
26
total power dissipation[w]
115
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-40
storage temperature (max.)[°c]
175
package size [mm]
16x23.45 (t=5.2)
common standard
aec-q101 (automotive grade)
特点：
- qualified to aec-q101
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant
