sct4036kw7-凯发k8一触即发
1200v, 40a, 7引脚smd, 沟槽结构, sic mosfet主要规格
特性:
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
36
generation
4th gen (trench)
drain current[a]
40
total power dissipation[w]
150
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-40
storage temperature (max.)[°c]
175
package size [mm]
10.2x15.4 (t=4.7)
特点:
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant
reference design / application evaluation kit
-
- evaluation board - hb2637l-evk-301
the evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. the board is equipped with two sic mosfets(sct4036kw7), isolated gate driver bm61s41rfv-c, isolated power supply required for the gate driver, ldo for 5v supply and easy to interface connectors for pwm signals.
quick start guide | user's guide |
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