sct4026dw7-凯发k8一触即发
750v, 51a, 7引脚smd, 沟槽结构, sic mosfet
sct4026dw7
主要规格
特性：
drain-source voltage[v]
750
drain-source on-state resistance(typ.)[mω]
26
generation
4th gen (trench)
drain current[a]
51
total power dissipation[w]
150
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-40
storage temperature (max.)[°c]
175
package size [mm]
10.2x15.4 (t=4.7)
特点：
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant
