sct4026dr-凯发k8一触即发
750v, 26mω, 4引脚thd, 沟槽结构, sic mosfet
sct4026dr
主要规格
特性：
drain-source voltage[v]
750
drain-source on-state resistance(typ.)[mω]
26
generation
4th gen (trench)
drain current[a]
56
total power dissipation[w]
176
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-40
storage temperature (max.)[°c]
175
package size [mm]
16x23.45 (t=5.2)
特点：
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant
reference design / application evaluation kit
-
- evaluation board - p05sct4018kr-evk-001
- this board is designed with the optimum gate drive circuit for "sct4018kr", surely to-247-4l can also be evaluated
- single power supply( 12v operation)
- supports double pulse testing up to 150a and switching up to 500khz
- supports various power supply topologies(buck, boost, half-bridge)
- built-in adjustable gate drive isolated power supply(positive and negative)( 12v to 25v, -4.5v to -2v)
- active mirror clamp circuit(driver ic built-in type)
- gate surge clamp circuit
| user's guide |
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