sct3160klhr-凯发k8一触即发
n-channel sic（碳化硅）功率mosfet
sct3160klhr
沟槽栅极结构的sic-mosfet。平面型sic-mosfet相比，同一芯片尺寸的导通电阻可降低50%，这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。
主要规格
特性：
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
160
generation
3rd gen (trench)
drain current[a]
17
total power dissipation[w]
103
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-55
storage temperature (max.)[°c]
175
package size [mm]
16x21 (t=5.2)
common standard
aec-q101 (automotive grade)
特点：
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant
- qualified to aec-q101
