sct2450ke-凯发k8一触即发
sic（碳化硅）mosfet
sct2450ke
主要规格
特性：
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
450
generation
2nd gen (planar)
drain current[a]
10
total power dissipation[w]
85
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-55
storage temperature (max.)[°c]
175
package size [mm]
16x21 (t=5.2)
特点：
・ low on-resistance・ fast switching speed
・ fast reverse recovery
・ easy to parallel
・ simple to drive
・ pb-free lead plating ; rohs compliant
